Product Id Chemical Purity Form Size Description Stock
WASIC110002N5
   
SiC 99.5% Wafer 1 inch x 1 inch x 0.35 mm th. 4H-SiC, N-Type POR 1 pcs
SPAL2O314D6T5N
   
Al2O3 99.999 % Sputtering Target 14 inch dia x 0.25 inch th. HP

RD~80%
Fully oxidized, microelectronics grade

POR 2 pcs
POTEO232503N5
   
TeO2 99.95% Powder - 325 mesh (12.5 mic aps) approx White POR 7 kg
POTIS2100003N
   
TiS2 99.9% Powder - 100 mesh POR 3 kg
POSN40000005N
   
Sn 99.9% Powder - 400 mesh POR 500 g
SPSI3N412D6T3N
   
Si3N4 99.9% Sputtering Target 12 inch dia x 0.25 inch th. HP POR 1 pcs
GPALCR31503N5
   
AlCr 99.95% Pieces 3 - 15 mm 50:50 wt%, VIM POR 5.5 kg
GRALCRSI1503N
   
AlCrSi 99.9% Granules - 15 mm (70/25/5 at%) Al:Cr:Si

Vac. Melted
equal to (56.73/39.05/4.22 wt %) Al:Cr:Si

POR 5 kg
GPNIS112003N5
   
NiS 99.95% Pieces 3 - 12 mm vim POR CO
GPNISE11203N5
   
NiSe 99.95% Pieces 3 - 12 mm VIM alloyed POR CO
GPFESE11203N5
   
FeSe 99.95% Pieces 3 - 12 mm VIM POR CO
GPCOS211203N5
   
CoS2 99.95% Pieces 3 - 12 mm POR CO
GPFES211203N5
   
FeS2 99.95% Pieces 1 - 12 mm Vac. Melted POR CO
GPCOSE11203N5
   
CoSe 99.95% Pieces 3 - 12 mm VIM alloyed POR 1 kg
FONB3SN252513N
   
Nb3Sn 99.9 % Foil 25 mm x 25 mm x 1 mm POR 1 pcs
GRKI36000003N
   
KI 99.9% Granules 3 mm - 6 mm DS POR 7.00 kg
POCUI1000003N
   
CuI 99.9% Powder - 100 mesh Ultra dry, DS

Ampouled under argon. Allow 2/4 wks for ampulation
Ultra Dry

POR 8.00 kg
POCDCL220004N
   
CdCl2 99.99% Powder - 20 mesh Anhydrous POR Stock
SPSI57D6T005N-1
   
Si 99.999 % Sputtering Target 57 inch dia x 0.25 inch th. p-type, P-type, vac. melted

Monocrystal, , RD~99%

POR 12 pcs
PONH4VO31004N5
   
NH4VO3 99.995% Powder - 100 mesh High purity synthetic powder POR 2.00 kg
PONH4VO31003N
   
NH4VO3 99.5% Powder - 100 mesh Synthetic powder

White powder, impurities may influence the color

POR 10.00 kg
GPAL2O325004N
   
Al2O3 99.99 % Pieces 2 - 5 mm Crystalline

sapphire, clear, mono-crystal sapphire

POR 17.00 kg
POL2TIO33253N
   
Li2TiO3 99.9 % Powder - 325 mesh approx DS POR 0 kg
SPLA2O33D6T4N
   
La2O3 99.99 % Sputtering Target 3 inch dia x 0.25 inch th. HP POR CO
SPLA2O33D3T4N
   
La2O3 99.99 % Sputtering Target 3 inch dia x 0.125 inch th. HP POR CO
SPLA2O32D6T4N
   
La2O3 99.99 % Sputtering Target 2 inch dia x 0.25 inch th. HP POR CO
SPLA2O32D3T4N
   
La2O3 99.99 % Sputtering Target 2 inch dia x 0.125 inch th. HP POR CO
TPYB10D10T3N5
   
Yb 99.95% Pellets 10 mm dia X 10 mm th. POR 400 g
SHIN34000005N
   
In 99.999% Shots 3 - 4 mm vac. melted POR 2.00 kg
SPSI57D6T005N
   
Si 99.999% Sputtering Target 57 mm dia x 0.25 inch th. Undoped, mono-crystalline POR 9 pcs
POSRTIO31003N5
   
SrTiO3 99.95 % Powder - 100 mesh approx vac. sintered POR 3.80 kg
WRNB3SN11003N
   
Nb3Sn 99.9 % Wire 1.25 mm dia. x 1000 meter length

Insulated dia.: 1.25 mm, Bare dia.: 1.1 mm, Filament dia.: 3.3 um

POR 2 spools
WRNB3SN01003N
   
Nb3Sn 99.9 % Wire 0.65 mm dia. x 1000 meter length

Insulated dia.: 0.65 mm, Bare dia.: 0.5 mm, Filament dia.: 1.5 um

POR 1 spool
POYAG4000003N
   
Y3Al5O12 99.9 % Powder - 40 + 100 mesh SG POR 25 kg
POBIFETIO31003N
   
BiFeTiO3 99.95% Powder - 100 mesh POR CO
POFETIO31003N
   
FeTiO3 99.95% Powder - 100 mesh Ilemnite POR 5.00
SPGESE10D6T4N-1
   
GeSe 99.99 % Sputtering Target 10 mm dia x 6.50 mm th. 60/40 at% POR CO
SPGESE164D6T4N-
   
GeSe 99.99 % Sputtering Target 164 mm dia x 6.25 mm th. 60/40 at% POR CO
SPGESE10D6T4N
   
GeSe 99.99 % Sputtering Target 10 mm dia x 6.50 mm th. 40/60 at% POR CO
SPGESE164D6T4N
   
GeSe 99.99% Sputtering Target 164 mm dia x 6.25 mm th. 40/60 at% POR CO