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  • GAST

  • SDS: GeAsSeTe.pdf
  • Formula: GeAsSeTe
  • CAS:
  • Germanium Arsenic Selenium Tellurium - Chalcogenide Glass
  • (1) ▾
Product Id Purity Form Size Description Stock
SPGEASSETE440D9T4N
   
99.99 % Sputtering Target 440 mm dia x 9.5 mm th. Info upon request

Semiconducting chalcogenide glass, mirror finishing available, various compositions available

CO
Product Id Purity Form Size Description Stock
GGESBTE36T04N
   
99.99 % Granules 3-6 mm 2/2/5 at%, VIM Alloyed

granulated

.500 kg
GGESBTE36T05N
   
99.999 % Granules 3-6 mm 2/3/5 at%, VIM Alloyed

granulated

1.200 kg
PGESBTE16005N
   
99.999 % Powder -160 mesh 2/2/5 at%, VIM Alloyed 2.300 kg
PGESBTE32504N
   
99.99 % Powder -325 mesh 2/2/5 at%, VIM Alloyed 2 kg
PGESBTE32504N
   
99.99 % Powder -325 mesh 2/3/5 at%, VIM Alloyed 0.01 kg
SGESBTE2D3T4N
   
99.99 % Sputtering target 2 inch dia x 0.125 inch th. 2/2/5 at%, VIM alloyed-HP CO
SGESBTE2D3T5N
   
99.999 % Sputtering target 2 inch dia x 0.125 inch th. 2/3/5 at%, VIM Alloyed, HP CO
SGESBTE2D6T4N
   
99.99 % Sputtering target 2 inch dia x 0.25 inch th. 2/2/5 at%, VIM alloyed-HP 1 pc
SGESBTE3D3T5N
   
99.999 % Sputtering target 3 inch dia x 0.125 inch th. 2/3/5 at%, VIM alloyed/HP 2 pcs
SGESBTE6D6T4N
   
99.99 % Sputtering target 6 inch dia x 0.25 inch th. x/y/z at%, VIM alloyed/HP

GeTe

CO
SGESBTE6D6T5N
   
99.999 % Sputtering target 6 inch dia x 0.25 inch th. 2/3/5 at%, VIM alloyed/HP 1 pc (in production)
SGESBTE8D6T4N
   
99.99 % Sputtering target 8 inch dia x 0.25 inch th. x/y/z at%, VIM alloyed/HP CO
SGESBTE8D6T5N
   
99.999 % Sputtering target 8 inch dia x 0.25 inch th. 2/3/5 at%, VIM alloyed/HP CO
Product Id Purity Form Size Description Stock
PGSET3250004N
   
99.99% Powder -325 mesh Grade I 5 kg
PGSET3250004N
   
99.99% Powder -325 mesh Grade II 5 kg
  • GSSAT

  • SDS: GeAsSeSbTe.pdf
  • Formula: GeSeSbAsTe
  • CAS:
  • Germanium selenium Antimony Arsenic Tellurium- Chalcogenide-Glass
  • (2) ▾
Product Id Purity Form Size Description Stock
PGSSAT325004N
   
99.99% Powder -325 mesh POR
SGSSAT7D8T04N
   
99.99% Sputtering Target 164 mm dia. x 8 mm Stock
Product Id Purity Form Size Description Stock
SSAG5D6T0004N
   
99.99 % Sputtering target 125 mm dia x 6 mm th

Semiconducting chalcogenide glass, mirror finishing available, various compositions

CO
  • TAGS

  • SDS: TeAsGeSi.pdf
  • Formula: TeAsGeSi
  • CAS:
  • Tellurium Arsenic Germanium Silicon - Chalcogenide Glass
  • (1) ▾
Product Id Purity Form Size Description Stock
STAGS17D9T04N
   
99.99 % Sputtering target 440 mm dia x 9 mm th

Semiconducting chalcogenide glass, mirror finishing available, various compositions available

CO