Praseodymium Silicide, Pieces, 99.9%, 3 -6 mm

Praseodymium silicide is used as a sputtering target material for the deposition of thin films in the development of rare-earth silicide Schottky barriers and ohmic contacts.

Utilized in semiconductor research for forming epitaxial rare-earth silicide layers on silicon substrates to study low Schottky barrier heights.