Molecular Beam Epitaxy (MBE) is a highly controlled thin-film deposition technique used to grow crystalline layers of materials with atomic-level precision. In an ultra-high vacuum environment, molecular or atomic beams of individual elements are directed onto a heated substrate, where they condense and form epitaxial layers. MBE enables precise control over film thickness, composition, and interface sharpness, making it ideal for producing high-purity semiconductor structures, quantum wells, superlattices, and advanced optoelectronic devices.
