Bismuth (III) Telluride - Bi2Te3 - 1304-82-1 -

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Bismuth (III) Telluride

Empirical Formula: Bi2Te3
HazMat: Class 6.1, UN3284, PG III
CAS No.: 1304-82-1
EINECS No.: 215-135-2
Tags: Semiconductor Telluride Pulsed Laser Deposition (PLD)

Moisture Sensitive. Ambient temperatures.

downloadSDS

	Product ID	Description	Compare	expand
	GPBI2TE33125N	Pieces \| 3 -12 mm \| 99.999%

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Additional Documents

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Pieces

	Product ID	Description	Compare	expand
	GPBI2TE33125N	Pieces \| 3 -12 mm \| 99.999%
	GPBI2TE33605N	Pieces \| 3 -6 mm \| 99.999%

	Product ID	Description	Compare	expand
	GPBI2TE33125N	Pieces \| 3 -12 mm \| 99.999%
	GPBI2TE33605N	Pieces \| 3 -6 mm \| 99.999%

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Sputtering Target

	Product ID	Description	Compare	expand
	SPBI2TE32D3T5N-3	Sputtering Target \| 2 inch dia x 0.125 inch th. \| 99.999%
	SPBI2TE31D3T5N	Sputtering Target \| 1 inch dia x 0.125 inch th. \| 99.999%
	SPBI2TE33D3T5N	Sputtering Target \| 3 inch dia x 0.125 inch th. \| 99.999%
	SPBI2TE34D3T5N	Sputtering Target \| 4 inch dia x 0.125 inch th. \| 99.999%
	SPBI2TE31D6T5N	Sputtering Target \| 1 inch dia x 0.25 inch th. \| 99.999%

	Product ID	Description	Compare	expand
	SPBI2TE32D3T5N-3	Sputtering Target \| 2 inch dia x 0.125 inch th. \| 99.999%
	SPBI2TE31D3T5N	Sputtering Target \| 1 inch dia x 0.125 inch th. \| 99.999%
	SPBI2TE33D3T5N	Sputtering Target \| 3 inch dia x 0.125 inch th. \| 99.999%
	SPBI2TE34D3T5N	Sputtering Target \| 4 inch dia x 0.125 inch th. \| 99.999%
	SPBI2TE31D6T5N	Sputtering Target \| 1 inch dia x 0.25 inch th. \| 99.999%

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Powder

	Product ID	Description	Compare	expand
	POBI2TE312503N	Powder \| -1250 mesh (5 mic aps) approx \| 99.9%
	POBI2TE33255N	Powder \| -325 mesh (20 mic aps) approx \| 99.999%
	POBI2TE32703N	Powder \| -270 mesh (21 mic aps) approx \| 99.9%

	Product ID	Description	Compare	expand
	POBI2TE312503N	Powder \| -1250 mesh (5 mic aps) approx \| 99.9%
	POBI2TE33255N	Powder \| -325 mesh (20 mic aps) approx \| 99.999%
	POBI2TE32703N	Powder \| -270 mesh (21 mic aps) approx \| 99.9%