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Tantalum Iodide

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Tags: Halides Iodide Specialty-Inorganics Custom-Synthetic

Product Specifications

Chemical Name

Tantalum Iodide

Chemical Formula

TaI5

Purity

99.99%

Composition

Size

-20 mesh

EINECS Number

238-742-4

Quantity Available

CAS Number

14693-81-3

Status

Product ID

BETAI5200004N

Hazmat

Powder: UN3260, Class 8, PG III

Catalog Number

533

Description

Crystalline

Comments

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General SpecificationsApplicationsSafety and ShippingCertificates of Analysis (COA)

Element Name

Tantalum Iodide

Symbol

TaI5

Atomic Number

Atomic Weight

665.47 g/mol

Melting Point

496 °C

Boiling Point

543 °C

Density

info

Semiconductors

Tantalum(V) iodide is used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create tantalum-based diffusion barriers and high-k dielectric layers in semiconductor devices.

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Evaporation materials

Used as a high-purity source material for the deposition of tantalum-containing thin films via thermal evaporation or specialized vapor phase transport techniques.

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HazMat Classification

Powder: UN3260, Class 8, PG III

description

Documentation

Safety Data Sheet (SDS) and Certificate of Analysis (COA) available for download. GHS-compliant labeling provided with all shipments.

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Shipping

Shipped via FedEx Ground or UPS. Hazmat surcharges apply. International orders may require export compliance review. Custom packaging available.

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Quality Assurance

All products supplied with lot-specific COA including ICP-OES elemental analysis, XRD phase identification, and particle size distribution data.

Tantalum Iodide

Product Specifications

Semiconductors

Evaporation materials

HazMat Classification

Documentation

Shipping

Quality Assurance

Certificates of Analysis (COA)

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