Erbium Silicide

Erbium silicide is used to form low Schottky barrier height contacts on n-type silicon, which is critical for high-performance infrared detectors and source/drain engineering in MOSFETs.

Erbium silicide targets are utilized in physical vapor deposition processes to create thin films for microelectronic components and ohmic contacts.

As a rare earth intermetallic compound, it is studied for its unique electronic properties and its role in developing silicon-compatible optoelectronic devices.