Germanium Tin, Pieces, 99.9%, 3 -6 mm

Germanium Tin is used as a direct bandgap group-IV semiconductor for the fabrication of infrared lasers, photodetectors, and light-emitting diodes integrated on silicon platforms.

GeSn alloys are utilized to engineer strain and bandgap properties in high-performance complementary metal-oxide-semiconductor (CMOS) devices and multi-junction solar cells.

GeSn targets are used in physical vapor deposition processes to create thin films for infrared sensing and high-speed electronic applications.