Hafnium Oxide:Lanthanide Oxide, Pieces, 99.99%, 1 -4 mm

Lanthanide-doped hafnium oxide targets are used in magnetron sputtering to deposit high-k dielectric thin films for advanced gate stacks.

Used to create high-refractive index layers with high laser damage thresholds and improved thermal stability in multilayer optical coatings.

Serves as a high-permittivity (high-k) gate dielectric material, where lanthanide doping is used to tune the threshold voltage and stabilize the ferroelectric phase.

Utilized as a source material for physical vapor deposition to create protective and functional thin films in microelectronic and photonic devices.