Indium Selenide, Pieces, 99.999%, 3 -6 mm

Indium selenide is a layered semiconductor used in the development of high-performance field-effect transistors and photodetectors due to its high electron mobility and tunable bandgap.

Utilized in optoelectronic devices such as solar cells and light sensors because of its efficient light-matter interaction and photo-responsivity.

Indium selenide is fabricated into sputtering targets for the deposition of thin films used in phase-change memory and photovoltaic applications.

Studied as a 2D nanomaterial (few-layer InSe) for next-generation electronic devices that require high carrier mobility at the atomic scale.