Lanthanum Indium Oxide, Pieces, 99.9%, 3 -6 mm

Lanthanum Indium Oxide is used as a sputtering target material to deposit thin films for high-k dielectric layers and transparent conducting oxide research.

Utilized in the development of transparent oxide semiconductors and heterostructures due to its wide bandgap and potential for high electron mobility.

Acts as a substrate or buffer layer in semiconductor research for growing epitaxial films, particularly in the study of two-dimensional electron gases (2DEGs).