Tin Arsenide, Pieces, 99.999%, 3 -6 mm

Tin arsenide is utilized as a III-V compound semiconductor material in specialized electronic and optoelectronic research applications.

Tin arsenide targets are used in sputtering processes to deposit thin films for the development of advanced semiconductor devices and infrared sensors.

SnAs is investigated as a high-capacity anode material for lithium-ion batteries due to its ability to undergo conversion and alloying reactions.