Barium Lanthanum Tin Oxide, Granules, 99.9%, 1 mm -6 mm

BaLaSnO3 is utilized as a high-mobility transparent conducting oxide (TCO) and a wide-bandgap semiconductor for high-power and high-frequency electronic devices.

Used as a ceramic target material in radio-frequency (RF) magnetron sputtering to deposit epitaxial thin films for oxide electronics.

Applied in optoelectronic devices due to its high optical transparency in the visible spectrum combined with high carrier mobility.