Chemical Name
Barium Lanthanum Tin Oxide
Chemical Formula
BaLaSnO3
Purity
99.9%
Composition
0.95/0.05 at% Ba:La
Size
1 mm -6 mm
EINECS Number
Quantity Available
kg
CAS Number
Status
Product ID
GRBALASNO163N
Hazmat
6.1, UN1564, PG II
Catalog Number
7620
Description
Comments
BaLaSnO3 is utilized as a high-mobility transparent conducting oxide (TCO) and a wide-bandgap semiconductor for high-power and high-frequency electronic devices.
Used as a ceramic target material in radio-frequency (RF) magnetron sputtering to deposit epitaxial thin films for oxide electronics.
Applied in optoelectronic devices due to its high optical transparency in the visible spectrum combined with high carrier mobility.
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