Germanium Arsenide, Granules, 99.99%, 3 mm -12 mm

Germanium Arsenide is a layered semiconductor material used in the research and development of 2D electronics and optoelectronic devices due to its anisotropic properties.

Germanium Arsenide targets are used in sputtering processes to deposit thin films for infrared optics and phase-change memory applications.

Utilized in the fabrication of photodetectors and optical sensors that leverage its narrow bandgap and high carrier mobility.