Indium Antimony Tellurium, Granules, 99.99%, 3 mm -6 mm

Indium Antimony Tellurium (IST) targets are used in magnetron sputtering processes to deposit phase-change thin films for advanced non-volatile memory applications.

IST is utilized as a phase-change material in semiconductor devices, specifically for Phase-Change Random Access Memory (PRAM) due to its rapid reversible transition between amorphous and crystalline states.