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Indium Antimony Tellurium

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Tags: Alloys Semiconductor Chalcogenide Glass

Product Specifications

Chemical Name

Chemical Formula

In/Sb/Te

Purity

99.99%

Composition

3.8/75/17.7 at% (In:Sb:Te)

Size

3 mm -6 mm

EINECS Number

Quantity Available

CAS Number

Status

Product ID

GRINSBTE3604N

Hazmat

Catalog Number

General SpecificationsApplicationsSafety and ShippingCertificates of Analysis (COA)

Element Name

Indium Antimony Tellurium

Symbol

In/Sb/Te

Atomic Number

Atomic Weight

Melting Point

600-630 °C

Boiling Point

Density

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Crystal Structure

Rhombohedral

Color / Appearance

Metallic gray solid

Thermal Conductivity

Electrical Resistivity

Coefficient of Thermal Expansion

Neutron Cross Section

Electron Configuration

This Product

GRINSBTE3604N

Composition

3.8/75/17.7 at% (In:Sb:Te)

Quantity Available

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Sputtering

Indium Antimony Tellurium (IST) targets are used in magnetron sputtering processes to deposit phase-change thin films for advanced non-volatile memory applications.

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Semiconductors

IST is utilized as a phase-change material in semiconductor devices, specifically for Phase-Change Random Access Memory (PRAM) due to its rapid reversible transition between amorphous and crystalline states.

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HazMat Classification

Not classified as hazardous material.

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Documentation

Safety Data Sheet (SDS) and Certificate of Analysis (COA) available for download. GHS-compliant labeling provided with all shipments.

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Shipping

Shipped via FedEx Ground or UPS. Hazmat surcharges apply. International orders may require export compliance review. Custom packaging available.

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Quality Assurance

All products supplied with lot-specific COA including ICP-OES elemental analysis, XRD phase identification, and particle size distribution data.

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Certificates of Analysis (COA)

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Indium Antimony Tellurium

Product Specifications

Sputtering

Semiconductors

HazMat Classification

Documentation

Shipping

Quality Assurance

Certificates of Analysis (COA)

Don’t see the Right Version?

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