Zinc Arsenide, Granules, 99.999%, 1 mm -6 mm

Zinc arsenide is a p-type II-V semiconductor with a direct band gap, utilized in the fabrication of infrared detectors and Hall effect devices.

Zinc arsenide targets are used in sputtering processes to deposit thin films for optoelectronic applications and semiconductor research.

Used in the development of laser diodes and photovoltaic cells due to its specific electronic band structure and optical properties.