Indium Arsenide, Ingot, 99.999%, 1 inch dia x .5 inch long

Indium Arsenide is a direct bandgap III-V semiconductor used in high-speed electronics and infrared detectors due to its high electron mobility and narrow bandgap.

Used in the fabrication of infrared LEDs, laser diodes, and photodetectors operating in the 1–3.8 µm wavelength range.

InAs sputtering targets are utilized to deposit thin films for the development of magnetic sensors and advanced heterostructure devices.

Used as a source material in physical vapor deposition processes to create epitaxial layers for high-frequency semiconductor components.