Indium Phosphide

Indium Phosphide is a critical substrate and active layer material for laser diodes, photodetectors, and optical transceivers used in fiber-optic communications due to its direct bandgap.

Used in the fabrication of high-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) for high-frequency and high-power electronic applications.

Indium Phosphide targets are used in sputtering processes to deposit thin films for the development of advanced photovoltaic cells and integrated photonic circuits.

InP is utilized as an evaporation source in physical vapor deposition processes to create thin semiconductor layers for experimental electronic devices.