Lanthanum Scandium Oxide

Lanthanum Scandium Oxide is utilized as a high-k dielectric material to replace silicon dioxide in advanced CMOS gate stacks due to its high thermal stability and wide bandgap.

LaScO3 targets are used in physical vapor deposition processes to create thin films for microelectronic and optoelectronic device fabrication.

Used to create high-refractive index layers in multilayer optical coatings that require stability at high temperatures.