Antimony (III) Telluride, Lump, 99.999%, 3 -20 mm approx

Antimony (III) Telluride is a narrow-bandgap semiconductor used in thermoelectric devices for cooling and power generation due to its high Seebeck coefficient.

Sb2Te3 is utilized as a sputtering target material for the deposition of thin films in phase-change memory (PRAM) and optical data storage applications.

Used as an evaporation source for creating thin-film layers in infrared detectors and thermoelectric thin-film assemblies.