Aluminum Arsenide, Powder, 99.5%, -20 mesh approx

Aluminum Arsenide is a III-V semiconductor material used in the fabrication of heterostructure devices such as laser diodes and light-emitting diodes due to its wide bandgap and lattice compatibility with Gallium Arsenide.

Used in the production of optoelectronic components, specifically in the creation of Bragg reflectors and quantum well structures for high-efficiency lasers and sensors.

High-purity Aluminum Arsenide targets are utilized in sputtering processes to deposit thin films for the development of advanced electronic and photovoltaic thin-film layers.