Chemical Name
Aluminum Arsenide
Chemical Formula
AlAs
Purity
99.5%
Composition
Size
-200 mesh
EINECS Number
245-255-0
Quantity Available
kg
CAS Number
22831-42-1
Status
Product ID
POALAS20002N5-1
Hazmat
Class 6.1, UN1557, PG II
Catalog Number
2870
Description
Comments
Aluminum Arsenide is a III-V semiconductor material used in the fabrication of heterostructure devices such as laser diodes and light-emitting diodes due to its wide bandgap and lattice compatibility with Gallium Arsenide.
Used in the production of optoelectronic components, specifically in the creation of Bragg reflectors and quantum well structures for high-efficiency lasers and sensors.
High-purity Aluminum Arsenide targets are utilized in sputtering processes to deposit thin films for the development of advanced electronic and photovoltaic thin-film layers.
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