Copper Indium Selenide, Powder, 99.999%, -325 mesh (13 mic aps)

Copper Indium Selenide is a direct bandgap p-type semiconductor used as the primary light-absorbing layer in thin-film solar cell technologies.

CuInSe2 targets are utilized in magnetron sputtering processes to deposit high-quality stoichiometric thin films for photovoltaic device fabrication.

This material is used in co-evaporation processes where copper, indium, and selenium are evaporated onto substrates to form high-efficiency CIS or CIGS absorber layers.