Class 4.1, UN1759, PG II
Catalog Number
6621
Description
Ultra dry
Comments
Allow 2-4 weeks for ampulation Ultra Dry
Hafnium bromide is used as a precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to create hafnium-based high-k dielectric thin films for advanced logic and memory devices.
Used as a volatile source material for depositing hafnium dioxide layers which serve as high-refractive index components in multilayer optical coatings.
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