Hafnium Silicide, Powder, 99.5%, -200 mesh ( 39 mic aps) approx

Hafnium silicide is used as a sputtering target material for the deposition of thin films in microelectronic applications, particularly for gate electrodes and diffusion barriers.

Used in the fabrication of metal-oxide-semiconductor (MOS) devices as a contact material or silicide layer to improve electrical performance and thermal stability.

Due to its high melting point and chemical stability, hafnium silicide is utilized in high-temperature refractory coatings and structural components.