Chemical Name
Hafnium Silicide
Chemical Formula
HfSi2
Purity
99.8%
Composition
Size
-325 mesh ( 15 mic aps)
EINECS Number
235-640-1
Quantity Available
kg
CAS Number
12401-56-8
Status
Product ID
POHFSI23252N8
Hazmat
Not hazardous for transportation
Catalog Number
2664
Description
Comments
Hafnium silicide is used as a sputtering target material for the deposition of thin films in microelectronic applications, particularly for gate electrodes and diffusion barriers.
Used in the fabrication of metal-oxide-semiconductor (MOS) devices as a contact material or silicide layer to improve electrical performance and thermal stability.
Due to its high melting point and chemical stability, hafnium silicide is utilized in high-temperature refractory coatings and structural components.
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