Chemical Name
Indium Antimony Tellurium
Chemical Formula
In/Sb/Te
Purity
99.99%
Composition
3.8/75/17.7 at% (In:Sb:Te)
Size
-200 mesh approx
EINECS Number
Quantity Available
kg
CAS Number
Status
Product ID
POINSBTE2004N
Hazmat
Catalog Number
9270
Description
Comments
Indium Antimony Tellurium (IST) targets are used in magnetron sputtering processes to deposit phase-change thin films for advanced non-volatile memory applications.
IST is utilized as a phase-change material in semiconductor devices, specifically for Phase-Change Random Access Memory (PRAM) due to its rapid reversible transition between amorphous and crystalline states.
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