Chemical Name
Silicon Germanium Alloy
Chemical Formula
SiGe
Purity
99.999%
Composition
80/20at%
Size
-325 mesh (50 mic aps)
EINECS Number
Quantity Available
kg
CAS Number
Status
Product ID
POSIGE325005N
Hazmat
Not hazardous for transportation
Catalog Number
6448
Description
Comments
Prealloyed
Silicon Germanium is used in heterojunction bipolar transistors (HBTs) and high-speed integrated circuits to improve carrier mobility and device performance compared to pure silicon.
SiGe sputtering targets are utilized to deposit thin films for the fabrication of microelectronic components and thermoelectric devices.
Used in the production of photodetectors and integrated photonic devices where the tunable bandgap of the SiGe alloy allows for infrared light detection.
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