Chemical Name
Tantalum Nitride
Chemical Formula
TaN
Purity
99.5%
Composition
Size
-200 mesh (23 mic aps) approx
EINECS Number
234-788-4
Quantity Available
kg
CAS Number
12033-62-4
Status
Product ID
POTAN200002N5
Hazmat
Not Hazardous for transportation.
Catalog Number
14309
Description
Comments
Mixed Phases may be present
Tantalum nitride is widely used as a diffusion barrier layer between copper interconnects and silicon substrates to prevent copper migration into the dielectric.
Tantalum nitride targets are used in physical vapor deposition (PVD) processes to create thin film resistors and hard coatings.
Due to its high melting point and chemical stability, it is utilized in high-temperature environments and as a wear-resistant coating.
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