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inred Microelectronics grade, suitable for applications in infrared detectors.
Zinc phosphide is a p-type II-V semiconductor with a direct bandgap of approximately 1.5 eV, making it a candidate for thin-film photovoltaic cells and optoelectronic devices.
Zinc phosphide targets are utilized in sputtering processes to deposit thin films for solar energy conversion and semiconductor research.
Used as a source material in vacuum evaporation processes to create thin layers for experimental electronic and optical applications.
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