Silver Indium Telluride, Sputtering Target, 99.99%, 50 mm x 50 mm x 4 mm th.

AgInTe2 is utilized as a sputtering target material for the deposition of thin films in phase-change memory devices and specialized photovoltaic applications.

As a ternary I-III-VI2 semiconductor, it is used in the fabrication of infrared detectors and non-linear optical devices due to its specific bandgap properties.

AgInTe2 serves as a p-type semiconductor material investigated for its thermoelectric properties and potential in high-efficiency solar cell absorber layers.