Aluminum Copper Silicon Alloy, Sputtering Target, 99.999%, 4 inch dia x 0.25 inch th.

Used as a sputtering target material to deposit thin-film interconnects in integrated circuits, where copper and silicon additions improve electromigration resistance and prevent junction spiking.

Applied in the metallization layer of semiconductor devices to provide reliable electrical contacts and conductive pathways.

Utilized in physical vapor deposition processes to create conductive coatings with enhanced mechanical and thermal stability compared to pure aluminum.