Chemical Name
Aluminum Gallium Nitride
Chemical Formula
AlGaN
Purity
99.99%
Composition
Al/GaN (15/85 at%)
Size
3 inch dia x 0.125 inch th.
EINECS Number
Quantity Available
pcs
CAS Number
Status
Product ID
SPALGAN3D3T4N
Hazmat
Not hazardous for transportation
Catalog Number
19023
Description
Comments
Aluminum Gallium Nitride is a wide-bandgap semiconductor used in the fabrication of ultraviolet light-emitting diodes (UV LEDs) and laser diodes.
Used in high-electron-mobility transistors (HEMTs) and other high-power, high-frequency electronic devices due to its tunable bandgap and high breakdown voltage.
AlGaN targets are utilized in sputter deposition processes to create thin films for advanced electronic and photonic device architectures.
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