Aluminum Antimonide, Sputtering Target, 99.99%, 4 inch dia x 0.125 inch th.

Aluminum antimonide is a III-V compound semiconductor used in the fabrication of high-efficiency photovoltaic cells and infrared detection devices due to its indirect bandgap of 1.6 eV.

AlSb targets are utilized in sputtering processes to deposit thin films for the development of advanced optoelectronic components and heterostructure devices.

Used as a substrate or active layer material in optoelectronic devices, particularly for light-emitting diodes and detectors operating in the infrared spectrum.