Gold Beryllium, Sputtering Target, 99.9%, 2 inch dia x 0.250 inch th.

Gold-beryllium alloys are used as p-type ohmic contact materials for III-V compound semiconductors such as Gallium Arsenide (GaAs).

AuBe targets are utilized in sputtering processes to deposit thin-film electrodes and contact layers in microelectronic device fabrication.

Used as a source material in physical vapor deposition to create conductive p-type layers in optoelectronic components.