Bismuth Tellurium Selenide, Sputtering Target, 99.999%, 4 inch dia x 0.125 inch th.

Bismuth Tellurium Selenide is a narrow-bandgap semiconductor used primarily in the fabrication of high-performance thermoelectric devices for solid-state cooling and power generation.

Used as a sputtering target material to deposit thin films for topological insulators and thermoelectric micro-coolers in electronic circuits.

Utilized as a source material in physical vapor deposition processes to create thin-film layers for infrared detectors and thermal management systems.