Copper Indium Gallium Selenide, Sputtering Target, 99.99%, 4 inch dia x 0.125 inch th.

Copper Indium Gallium Selenide is a direct-bandgap semiconductor used as an absorber layer in high-efficiency thin-film solar cells.

CIGS targets are utilized in magnetron sputtering processes to deposit uniform thin films onto substrates for the fabrication of photovoltaic devices.

The material is used in co-evaporation processes where copper, indium, gallium, and selenium are evaporated simultaneously to form the CIGS layer.