Copper Indium Gallium Selenide
Sputtering TargetCopper Indium Gallium Selenide, Sputtering Target, 99.99%, 6 inch dia x 0.125 inch th.
Product Specifications
Chemical Name
Chemical Formula
Purity
99.99%
Composition
1:1:1:2 at%
Size
6 inch dia x 0.125 inch th.
EINECS Number
Quantity Available
pcs
CAS Number
12018-95-0
Status
Product ID
SPCIGS6D3T04N
Hazmat
Catalog Number
4016
Description
Comments
Ga2Se3, CuSe
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Element Name
Copper Indium Gallium Selenide
Symbol
CuInGaSe
Atomic Number
-
Atomic Weight
-
Melting Point
990 °C
Boiling Point
-
Density
5.7 g/cm³
Crystal Structure
Chalcopyrite
Color / Appearance
Black or dark gray solid
Thermal Conductivity
-
Electrical Resistivity
-
Coefficient of Thermal Expansion
-
Electronegativity
-
Neutron Cross Section
-
Electron Configuration
-
This Product
SPCIGS6D3T04N
Form
Sputtering Target
Purity
99.99%
Composition
1:1:1:2 at%
Size
6 inch dia x 0.125 inch th.
Quantity Available
pcs
Catalog Number
4016
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Semiconductors
Copper Indium Gallium Selenide is a direct-bandgap semiconductor used as an absorber layer in high-efficiency thin-film solar cells.
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Sputtering
CIGS targets are utilized in magnetron sputtering processes to deposit uniform thin films onto substrates for the fabrication of photovoltaic devices.
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Evaporation materials
The material is used in co-evaporation processes where copper, indium, gallium, and selenium are evaporated simultaneously to form the CIGS layer.
warning
HazMat Classification
Not classified as hazardous material.
description
Documentation
Safety Data Sheet (SDS) and Certificate of Analysis (COA) available for download. GHS-compliant labeling provided with all shipments.
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Shipping
Shipped via FedEx Ground or UPS. Hazmat surcharges apply. International orders may require export compliance review. Custom packaging available.
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Quality Assurance
All products supplied with lot-specific COA including ICP-OES elemental analysis, XRD phase identification, and particle size distribution data.
description
Certificates of Analysis (COA)
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