Cobalt Iron Boron, Sputtering Target, 99.95%, 2 inch dia x 2 mm th.

Cobalt Iron Boron is frequently used as a sputtering target material to deposit thin films for magnetic tunnel junctions (MTJs) and spintronic devices due to its high spin polarization and amorphous structure.

CoFeB thin films are integrated into semiconductor-based memory technologies, specifically Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM), as a key electrode material.