Copper Germanium Sulfide, Sputtering Target, 99.9%, 2 inch dia x 0.25 inch th.

Cu8GeS6 is an argyrodite-type semiconductor studied for its mixed ionic-electronic conduction and potential use in thermoelectric and photoelectric devices.

Used as a target material in sputtering processes to deposit thin films for the development of advanced chalcogenide-based electronic and memory components.