Gallium Arsenide, Sputtering Target, 99.999%, 3 inch dia x 0.25 inch th.

Gallium Arsenide is a primary compound semiconductor used for high-frequency electronics, microwave integrated circuits, and high-efficiency solar cells due to its direct bandgap and high electron mobility.

Used extensively in the fabrication of light-emitting diodes (LEDs), laser diodes, and photodetectors, leveraging its efficient light emission properties.

GaAs targets are utilized in sputtering processes to deposit thin films for high-speed electronic devices and specialized optical coatings.

Used as a source material in physical vapor deposition processes to create thin-film layers for semiconductor device architecture.