Gallium Antimonide, Sputtering Target, 99.999%, 3 inch dia x 0.125 inch th.

Gallium antimonide is a narrow-bandgap III-V semiconductor used in the fabrication of infrared detectors, thermal photovoltaic cells, and high-speed electronic devices.

Used as a substrate or active layer material for infrared LEDs and laser diodes operating in the 2 to 5 micrometer wavelength range.

GaSb sputtering targets are utilized to deposit thin films for phase-change memory applications and specialized optical coatings.