Gallium-Aluminum-Zinc Oxide, Sputtering Target, 99.99%, 2 inch dia x 0.125 inch th.

Gallium-Aluminum-Zinc Oxide is utilized as a high-purity sputtering target material to deposit transparent conductive oxide (TCO) thin films with enhanced electrical stability and optical transparency.

Used in the fabrication of thin-film transistors (TFTs) and wide-bandgap semiconductor layers for next-generation display technologies and power electronics.

Applied as a transparent electrode material in optoelectronic devices such as solar cells and light-emitting diodes (LEDs) due to its tunable bandgap and high carrier mobility.