Germanium Arsenic Selenium Tellurium - Chalcogenide Glass, Sputtering Target, 99.99%, 440 mm dia x 9.5 mm th.

GeAsSeTe targets are used in magnetron sputtering processes to deposit thin-film chalcogenide layers for phase-change memory (PCM) and infrared optical coatings.

This quaternary chalcogenide glass is utilized in the fabrication of infrared-transmitting lenses, sensors, and waveguides due to its broad transparency in the mid-to-long wave infrared spectrum.

Used as a functional material in the development of ovonic threshold switches and non-volatile memory devices within semiconductor architectures.

GeAsSeTe is employed as a source material for thermal or electron-beam evaporation to create uniform amorphous thin films for optical and electronic applications.