Germanium Sulfide, Sputtering Target, 99.99%, 3 inch dia x 0.25 inch th.

Germanium sulfide is a group IV-VI semiconductor with a layered structure, investigated for use in next-generation field-effect transistors and photodetectors due to its tunable bandgap.

Utilized in the fabrication of near-infrared optoelectronic devices and as a chalcogenide glass component for infrared-transmitting optics.

GeS targets are used in sputtering processes to deposit thin films for phase-change memory applications and specialized optical coatings.

GeS is used as an evaporation source for the vacuum deposition of thin semiconductor layers in thin-film solar cell research.

Synthesized into 2D nanosheets and nanowires to explore anisotropic electronic and optical properties in low-dimensional materials science.