Germanium Antimony Selenide, Sputtering Target, 99.99%, 3 inch dia x 0.125 inch th.

Germanium Antimony Selenide is used as a sputtering target material for the deposition of chalcogenide thin films in phase-change memory (PCM) and infrared optical applications.

This ternary chalcogenide glass is utilized in optoelectronic devices due to its high transparency in the infrared spectrum and its tunable refractive index.

GeSbSe is employed as a specialized semiconductor material in the development of non-volatile memory devices and threshold switching components.