Germanium Antimony Telluride, Sputtering Target, 99.99%, 1 inch dia x 3 mm th.

Germanium Antimony Telluride is used as a sputtering target material to deposit thin films for phase-change memory (PRAM) and optical data storage applications.

GST is a critical chalcogenide glass used in semiconductor manufacturing for non-volatile phase-change random-access memory due to its rapid switching between amorphous and crystalline states.