Germanium Selenide, Sputtering Target, 99.999%, 5 inch dia x 6.5 mm th.

Germanium selenide is a p-type semiconductor used in the fabrication of thin-film electronic devices and phase-change memory applications.

GeSe2 targets are utilized in sputtering processes to deposit chalcogenide thin films for infrared optics and memory storage devices.

Used as a source material in vacuum evaporation to create amorphous thin films for optoelectronic and sensing applications.

Applied in the development of photodetectors and optical switching devices due to its unique bandgap and photo-sensitive properties.