Germanium Telluride, Sputtering Target, 99.999%, 3 inch dia x 0.125 inch th.

Germanium Telluride is a key phase-change material used in non-volatile memory devices and chalcogenide-based semiconductor logic circuits.

GeTe targets are utilized in physical vapor deposition to create thin films for optical data storage and phase-change random-access memory (PRAM).

Used in the fabrication of infrared detectors and optical switching devices due to its tunable refractive index during phase transitions.

GeTe is employed as a source material in thermal evaporation processes to deposit functional chalcogenide layers for electronic applications.