Germanium Telluride Lithium, Sputtering Target, 99.99%, 6 inch dia x 0.25 inch th.

Germanium telluride doped with lithium is utilized as a sputtering target material for the deposition of thin films in phase-change memory (PCM) and neuromorphic computing applications.

Lithium-doped GeTe is investigated as a narrow-bandgap semiconductor material for thermoelectric energy conversion and advanced electronic switching devices.